Two-dimenional Electronics based on Ion-gated Nanosheets


Justin Jianting Ye
University of Groningen

Time and Place

Thursday, 13 February 2014 - 11:00am
CSEC Seminar Room


Two-dimenional Electronics based on Ion-gated Nanosheets An electric double layer transistor (EDLT), a variation of a conventional field effect transistor (FET), is attracting increasing interests because of its ability to accumulate dense carriers (~1014 cm-2) mediated by the movement of organic ions at the channel surface (see Figure). Integrating EDLT with varieties of inorganic nano-sheets (isolated from different layered materials) forms novel two-dimensional electronic systems at organic/inorganic interfaces hosting many controllable electronic phases. In this talk, I will present an experimental study on the field effect control of quantum phase transitions such as metal-insulator transition, superconductivity, and ferromagnetism using EDLT as an effective tool. By applying to a broader range of materials (for instance, varieties of thin films and single crystals), this organic/inorganic interface is promising to act as a rich playground for novel electronic properties and an emerging source of new device functionalities.